HIGH-GAIN LOW-NOISE GAALAS-GAAS PHOTOTRANSISTORSSCAVENNEC A; ANKRI D; BESOMBES C et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 10; PP. 394-395; BIBL. 11 REF.Article

Deep-level transient spectroscopy in InGaAsN lattice-matched to GaAsJOHNSTON, S. W; AHRENKIEL, R. K; FRIEDMAN, D. J et al.sans titre. 2002, pp 1023-1026, isbn 0-7803-7471-1, 4 p.Conference Paper

DETERMINATION OF MINORITY CARRIER LIFETIME AND EFFECTIVE BACK SURFACE RECOMBINATION VELOCITY IN BSF SILICON SOLAR CELLS FROM TRANSIENT MEASUREMENTSJAIN SC; AGARWAL SK; RAY UC et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 10; PP. 365-367; BIBL. 11 REF.Article

AlGaAs/GaAs heterojunction bipolar transistor circuits with improved high-speed performanceCHANG, M. F; ASBECK, P. M; WANG, K. C et al.Electronics Letters. 1986, Vol 22, Num 22, pp 1173-1174, issn 0013-5194Article

An empirical pseudopotential analysis of (100) and (110) GaAs-Al_xGa₁-_xAs heterojunctionsMARSH, A. C; INKSON, J. C.Journal of physics. C. Solid state physics. 1986, Vol 19, Num 1, pp 43-52, issn 0022-3719Article

Study of persistent photoconductivity effect in n-type selectively doped AlGaAs/GaAs heterojunctionKASTALSKY, A; HWANG, J. C. M.Solid state communications. 1984, Vol 51, Num 5, pp 317-322, issn 0038-1098Article

P-GAAS/P-GA_1-XAL_XAS ISOTYPE HETEROJUNCTIONS IN DOUBLE HETEROSTRUCTURE LASER MATERIALHAKKI BW.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 10; PP. 6054-6058; BIBL. 28 REF.Article

Fabrication and characterization of AlGaAs/GaAS heterojunction bipolar transistorsITO, H; ISHIBASHI, T; SUGETA, T et al.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 2, pp 224-229, issn 0018-9383Article

Photoconductivity in selectively n- and p-doped Al_xGa_1-x/GaAs heterostructuresSCHUBERT, E. F; FISCHER, A; PLOOG, K et al.Solid-state electronics. 1986, Vol 29, Num 2, pp 173-180, issn 0038-1101Article

GAIN SUPPRESSION IN GAAS/ALGAAS TJS LASERSKAWANISHI H; PETERSEN PE.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 6; PP. 823-824; BIBL. 8 REF.Article

Improved AlGaAs/GaAs HBT performance by InGaAs emitter cap layerNAGATA, K; NAKAJIMA, O; NITTONO, T et al.Electronics Letters. 1987, Vol 23, Num 11, pp 566-568, issn 0013-5194Article

Photoluminescence in AlGaAs/GaAs heterojunction bipolar transistorsEDA, K; INADA, M.Journal of applied physics. 1987, Vol 62, Num 10, pp 4236-4243, issn 0021-8979Article

Process optimization for high efficiency thin graded band gap window GaAs and GaAPAs solar cellsMAYET, L; GAVAND, M; MONTEGU, B et al.Photovoltaic specialists conference. 19. 1987, pp 98-101Conference Paper

Verification of the charge-control model for GaAlAs/GaAs heterojunction bipolar transistorsTASSELLI, J; MARTY, A; BAILBE, J. P et al.Solid-state electronics. 1986, Vol 29, Num 9, pp 919-923, issn 0038-1101Article

Electron subband structure in selectively doped n-Al_xGa_1-xAs/GaAs heterostructuresSCHUBERT, E. F; PLOOG, K.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 9, pp 1868-1873, issn 0018-9383Article

Vertical electron transistor (VET) in GaAs with a heterojunction (AlGaAs-GaAs) cathodeMISHRA, U; MAKI, P. A; WENDT, J. R et al.Electronics Letters. 1984, Vol 20, Num 3, pp 145-146, issn 0013-5194Article

(GAAL)AS/GAAS HETEROJUNCTION BIPOLAR TRANSISTORS WITH GRADED COMPOSITION IN THE BASEMILLER DL; ASBECK PM; ANDERSON RJ et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 10; PP. 367-368; BIBL. 7 REF.Article

High-performance P-n-p AlGaAs/GaAs heterojunction bipolar transistors: a theoretical analysisHUTCHBY, J. A.IEEE electron device letters. 1986, Vol 7, Num 2, pp 108-111, issn 0741-3106Article

Resonant polarons in a GaAs-GaAlAs heterostructureHORST, M; MERKT, U; ZAWADZKI, W et al.Solid state communications. 1985, Vol 53, Num 4, pp 403-405, issn 0038-1098Article

#7B-F.é.m. de déformation dynamique d'une hétérojonction AlxGa1-xAs ― GaAsBARTASHEVICH, Z. N; POZHELA, YU. K; FILIPAVICHYUS, V. S et al.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 2, pp 289-294, issn 0015-3222Article

Precise determination of turning mirror loss using GaAs/AlGaAs lasers with up to ten 90° intracavity turning mirrorsJOHNSON, J. E; TANG, C. L.IEEE photonics technology letters. 1992, Vol 4, Num 1, pp 24-26Article

Low-loss GaAs/AlGaAs waveguide phase modulator using a W-shaped index profileDERI, R. J; KAPON, E; HARBISON, J. P et al.Applied physics letters. 1988, Vol 53, Num 19, pp 1803-1805, issn 0003-6951Article

Surface recombination in GaAlAs/GaAs heterostructure bipolar transistorsSANDIP TIWARI; FRANK, D. J; WRIGHT, S. L et al.Journal of applied physics. 1988, Vol 64, Num 10, pp 5009-5012, issn 0021-8979Article

AlGaAs/GaAs heterojunction bipolar transistors fabricated using a self-aligned dual-lift-off processCHANG, M.-C. F; ASBECK, P. M; WANG, K. C et al.IEEE electron device letters. 1987, Vol 8, Num 7, pp 303-305, issn 0741-3106Article

Microcavity GaAlAs/GaAs surface-emitting laser with 1_th=6 mAIGA, K; KINOSHITA, S; KOYAMA, F et al.Electronics Letters. 1987, Vol 23, Num 3, pp 134-136, issn 0013-5194Article